On the formation of vacancy defects in III-nitride semiconductors
Identifieur interne : 001781 ( Main/Repository ); précédent : 001780; suivant : 001782On the formation of vacancy defects in III-nitride semiconductors
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Abstract
In-grown group III (cation) vacancies (VGa, VAl, VIn) in GaN, AlN and InN tend to be complexed with donor-type defects on the N sublattice, such as ON or the N vacancy (VN). The cation vacancies and their complexes are generally deep acceptors, and hence they compensate for the n-type conductivity and add to the scattering centers limiting the carrier mobility in these materials. This work presents results obtained with positron annihilation spectroscopy in a variety of GaN, AIN, InN samples from different sources. The vacancy-donor complexes are different in these three materials, and their importance in determining the opto-electronic properties of the material varies as well. The formation of these defects is discussed in the light of the differences in the growth methods.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">On the formation of vacancy defects in III-nitride semiconductors</title><author><name sortKey="Tuomisto, F" uniqKey="Tuomisto F">F. Tuomisto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>00076 Aalto Espoo</wicri:noRegion></affiliation></author><author><name sortKey="M Ki, J M" uniqKey="M Ki J">J.-M. M Ki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>00076 Aalto Espoo</wicri:noRegion></affiliation></author><author><name sortKey="Rauch, C" uniqKey="Rauch C">C. Rauch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>00076 Aalto Espoo</wicri:noRegion></affiliation></author><author><name sortKey="Makkonen, I" uniqKey="Makkonen I">I. Makkonen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>00076 Aalto Espoo</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0302406</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0302406 INIST</idno><idno type="RBID">Pascal:12-0302406</idno><idno type="wicri:Area/Main/Corpus">001A72</idno><idno type="wicri:Area/Main/Repository">001781</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitride</term><term>Carrier mobility</term><term>Gallium nitride</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium nitride</term><term>N type conductivity</term><term>Optoelectronic properties</term><term>Positron annihilation</term><term>Sublattices</term><term>Vacancies</term><term>Vanadium nitride</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Lacune</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Sous réseau</term><term>Conductivité type n</term><term>Mobilité porteur charge</term><term>Annihilation positon</term><term>Propriété optoélectronique</term><term>Mécanisme croissance</term><term>Nitrure de gallium</term><term>Nitrure d'aluminium</term><term>Nitrure d'indium</term><term>Nitrure de vanadium</term><term>GaN</term><term>AlN</term><term>InN</term><term>8110A</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In-grown group III (cation) vacancies (V<sub>Ga</sub>, V<sub>Al</sub>, V<sub>In</sub>) in GaN, AlN and InN tend to be complexed with donor-type defects on the N sublattice, such as ON or the N vacancy (V<sub>N</sub>). The cation vacancies and their complexes are generally deep acceptors, and hence they compensate for the n-type conductivity and add to the scattering centers limiting the carrier mobility in these materials. This work presents results obtained with positron annihilation spectroscopy in a variety of GaN, AIN, InN samples from different sources. The vacancy-donor complexes are different in these three materials, and their importance in determining the opto-electronic properties of the material varies as well. The formation of these defects is discussed in the light of the differences in the growth methods.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>350</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>On the formation of vacancy defects in III-nitride semiconductors</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The 7th International Workshop on Bulk Nitride Semiconductors (IWBNS VII)</s1></fA09><fA11 i1="01" i2="1"><s1>TUOMISTO (F.)</s1></fA11><fA11 i1="02" i2="1"><s1>MÄKI (J.-M.)</s1></fA11><fA11 i1="03" i2="1"><s1>RAUCH (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>MAKKONEN (I.)</s1></fA11><fA12 i1="01" i2="1"><s1>FREITAS (Jaime JR)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SITAR (Zlatko)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>KUMAGAI (Yoshinao)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>MEISSENER (Elke)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Naval Research Laboratory</s1><s2>Washington, DC 20375</s2><s3>USA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>North Carolina State University</s1><s2>Raleigh, NC 27695</s2><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Tokyo University of Agriculture and Technology</s1><s2>Konagei, Tokyo 184-8588</s2><s3>JPN</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>Fraunhofer IISB, Department of Crystal Growth</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>4 aut.</sZ></fA15><fA20><s1>93-97</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000507941560200</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>43 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0302406</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In-grown group III (cation) vacancies (V<sub>Ga</sub>, V<sub>Al</sub>, V<sub>In</sub>) in GaN, AlN and InN tend to be complexed with donor-type defects on the N sublattice, such as ON or the N vacancy (V<sub>N</sub>). The cation vacancies and their complexes are generally deep acceptors, and hence they compensate for the n-type conductivity and add to the scattering centers limiting the carrier mobility in these materials. This work presents results obtained with positron annihilation spectroscopy in a variety of GaN, AIN, InN samples from different sources. The vacancy-donor complexes are different in these three materials, and their importance in determining the opto-electronic properties of the material varies as well. The formation of these defects is discussed in the light of the differences in the growth methods.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10A</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Lacune</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Vacancies</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Composé III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>III-V compound</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Sous réseau</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Sublattices</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Conductivité type n</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>N type conductivity</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Conductividad tipo n</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Mobilité porteur charge</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Carrier mobility</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Annihilation positon</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Positron annihilation</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Propriété optoélectronique</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Optoelectronic properties</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Propiedad optoelectrónica</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Nitrure d'aluminium</s0><s5>16</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Aluminium nitride</s0><s5>16</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Aluminio nitruro</s0><s5>16</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Indium nitride</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>17</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Nitrure de vanadium</s0><s5>18</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Vanadium nitride</s0><s5>18</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Vanadio nitruro</s0><s5>18</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>AlN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>InN</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>71</s5></fC03><fN21><s1>233</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Workshop on Bulk Nitride Semiconductors (IWBNS VII)</s1><s2>7</s2><s3>Koyasan, Wakayama JPN</s3><s4>2011-03-15</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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